डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRFS830 | N-CHANNEL MOSFET IRFS830
Rev.E Dec.-2015
DATA SHEET
描述 / Descriptions TO-220F 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a TO-220F Plastic Package.
特征 / Features
低栅电荷,低反馈电容,开关 |
BLUE ROCKET ELECTRONICS |
|
IRFS830 | N-CHANNEL MOSFET IRFS830(CS830F)
N-Channel MOSFET/N 沟 MOS 晶体管
用途:用于高效 DC/DC 转换和功率开关。
Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch mode po |
LZG |
|
IRFS830 | N-Channel Power MOSFET 500V/3.1A N-Channel Power MOSFET (Discontinued)
IRFS830 SAMSUNG
General Description
Low on resistance Improved inductive ruggedness Fast switching time Rugged polysilicon gate cell structure |
TAITRON |
|
IRFS830A | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRFS830A
FEATURES ·Avalanche Rugged Technology ·Rugged Gate Oxide Technology ·Lower Input Capacitance ·Improved Gate Charge |
Inchange Semiconductor |
|
IRFS830A | Power MOSFET
)($785(6
Qýýý$YDODQFKHýý5XJJHGýý7HFKQRORJ Qýýý5XJJHGýý*DWHýý2[LGHýý7HFKQRORJý Qýýý/RZHUýý,QSXWýý&DSDFLWDQFH Qýýý,PSURYHGýý*DWHýý&KDUJH Qýýý([WHQGHGýý6 |
Samsung |
|
IRFS830B | 500V N-Channel MOSFET IRF830B/IRFS830B
November 2001
IRF830B/IRFS830B
500V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, |
Fairchild |
www.DataSheet.in | 2017 | संपर्क |