डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRFS640A | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRFS640A
FEATURES ·Avalanche Rugged Technology ·Rugged Gate Oxide Technology ·Lower Input Capacitance ·Improved Gate Charge |
Inchange Semiconductor |
|
IRFS640A | Advanced Power MOSFET www.DataSheet4U.com
DataSheet4U.com
DataShee
DataSheet4U.com
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DataSheet4U.com
DataShee
DataSheet4U.com
DataSheet4U.com DataSheet 4 U .com |
Samsung Electronics |
|
IRFS640A | Advanced Power MOSFET www.DataSheet4U.com
Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 |
Fairchild Semiconductor |
www.DataSheet.in | 2017 | संपर्क |