IRFS38N20D डाटा शीट PDF( Datasheet )

Applications  High frequency DC-DC converters  Plasma Display Panel Benefits  Low Gate-to-Drain Charge to Reduce Switching Losses  Fully Characterized Capacitance Including Effective COSS to Simplif

PD - 94358 SMPS MOSFET IRFB38N20D IRFS38N20D IRFSL38N20D HEXFET® Power MOSFET l Applications High frequency DC-DC converters VDSS 200V RDS(on) max 0.054Ω ID 44A Benefits Low Gate-to-Drain Charge to R

Isc N-Channel MOSFET Transistor IRFS38N20D ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations f

Isc N-Channel MOSFET Transistor ·FEATURES ·With To-262 package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device pe

  Applications  High frequency DC-DC converters  Plasma Display Panel Benefits  Low Gate-to-Drain Charge to Reduce Switching Losses  Fully Characterized Capacitance Including Effective COSS to Simp

PROVISIONAL PD - 97001A SMPS MOSFET Applications l High frequency DC-DC converters l Plasma Display Panel l Lead-Free IRFB38N20DPbF IRFS38N20DPbF IRFSL38N20DPbF HEXFET® Power MOSFET Key Parameters VDS VDS