IRFR4510 डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor IRFR4510, IIRFR4510 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤13.9mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust de

Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G Benefits l Improved Gate, Avalanche a