IRFR3806 डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor IRFR3806, IIRFR3806 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤15.8mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust de

Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and