डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRFR3411 | N-Channel MOSFET isc N-Channel MOSFET Transistor
IRFR3411, IIRFR3411
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤44mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust devi |
INCHANGE |
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IRFR3411 | Power MOSFET l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
Description
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Advanced HEXFET® Power MOSFETs from |
International Rectifier |
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IRFR3411PBF | HEXFET Power MOSFET PD - 95371A
l l l l l l l
Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free
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IRFR3411PbF IRFU3411PbF
HEXFET |
International Rectifier |
www.DataSheet.in | 2017 | संपर्क |