डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRFR330 | Power MOSFET $GYDQFHG 3RZHU 026)(7
IRFR330
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage |
Fairchild Semiconductor |
|
IRFR3303 | HEXFET Power MOSFET PD - 9.1642A
IRFR/U3303
HEXFET® Power MOSFET
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Ultra Low On-Resistance Surface Mount (IRFR3303) Straight Lead (IRFU3033) Advanced Process Technology Fast Switching Fully Avalanche Rated
D
VDSS = |
International Rectifier |
|
IRFR3303PBF | HEXFET Power MOSFET PD - 95070A
IRFR3303PbF IRFU3303PbF
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Ultra Low On-Resistance Surface Mount (IRFR3303) Straight Lead (IRFU3033) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free
HEXFET® |
International Rectifier |
|
IRFR330A | Power MOSFET
)($785(6
Qýýý$YDODQFKHýý5XJJHGýý7HFKQRORJ Qýýý5XJJHGýý*DWHýý2[LGHýý7HFKQRORJý Qýýý/RZHUýý,QSXWýý&DSDFLWDQFH Qýýý,PSURYHGýý*DWHýý&KDUJH Qýýý |
Samsung |
|
IRFR330B | 400V N-Channel MOSFET IRFR330B / IRFU330B
November 2001
IRFR330B / IRFU330B
400V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, pl |
Fairchild Semiconductor |
www.DataSheet.in | 2017 | संपर्क |