डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRFP244 | Power MOSFET Power MOSFET
IRFP244, SiHFP244
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
250 VGS = 10 V
63 12 39 Single
0.28
TO-247AC
D
S
D G
G
S N-Channel M |
Vishay |
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IRFP244 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRFP244
FEATURES ·Drain Current –ID= 15A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 250V(Min) ·Static Drain-Source On-Resist |
Inchange Semiconductor |
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IRFP244 | Power MOSFET $GYDQFHG 3RZHU 026)(7
IRFP244
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage |
Fairchild Semiconductor |
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IRFP244 | Power MOSFET |
International Rectifier |
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IRFP244 | N-Channel Power MOSFETs Semiconductor
IRFP244, IRFP245, IRFP246, IRFP247
15A and 14A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs
Description
These are N-Channel enhancement mode silicon gate power field effect transis |
Intersil Corporation |
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IRFP244A | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRFP244A
FEATURES ·Drain Current –ID= 16A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 250V(Min) ·Static Drain-Source On-Resis |
Inchange Semiconductor |
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IRFP244B | 250V N-Channel MOSFET IRFP244B
November 2001
IRFP244B
250V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. |
Fairchild Semiconductor |
www.DataSheet.in | 2017 | संपर्क |