डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRFP21N60L | Power MOSFET IRFP21N60L, SiHFP21N60L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
600 VGS = 10 V
150 46 64 Single
0.27
TO-247AC
D
G
S D G
ORDERIN |
Vishay |
|
IRFP21N60L | N-Channel MOSFET iscN-Channel MOSFET Transistor
IRFP21N60L
·FEATURES ·Low drain-source on-resistance:
RDS(ON) =0.32Ω (MAX) ·Enhancement mode:
Vth = 3.0 to 5.0V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum Lo |
INCHANGE |
www.DataSheet.in | 2017 | संपर्क |