डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRFIBC40 | Power MOSFET |
International Rectifier |
|
IRFIBC40G | Power MOSFET |
International Rectifier |
|
IRFIBC40G | N-Channel MOSFET iscN-Channel MOSFET Transistor
·FEATURES ·Low drain-source on-resistance:
RDS(ON) = 1.2Ω (MAX) ·Enhancement mode:
Vth = 2 to 4V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum Lot-to-Lot variati |
INCHANGE |
|
IRFIBC40G | Power MOSFET IRFIBC40G, SiHFIBC40G
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
600
VGS = 10 V
1.2
60
8.3
30
Single
TO-220 FULLPAK
D
G
GDS
S |
Vishay |
|
IRFIBC40GLC | Power MOSFET www.vishay.com
IRFIBC40GLC, SiHFIBC40GLC
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg max. (nC) Qgs (nC) Qgd (nC) Configuration
600
VGS = 10 V
1.2
39
10
19
Single
D
TO-220 |
Vishay |
|
IRFIBC40GLC | N-Channel MOSFET iscN-Channel MOSFET Transistor
·FEATURES ·Low drain-source on-resistance:
RDS(ON) = 1.2Ω (MAX) ·Enhancement mode:
Vth = 2 to 4V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum Lot-to-Lot variati |
INCHANGE |
|
IRFIBC40GLC | Power MOSFET |
International Rectifier |
www.DataSheet.in | 2017 | संपर्क |