डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRFI634 | 250V N-Channel MOSFET IRFW634B / IRFI634B
November 2001
IRFW634B / IRFI634B
250V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, pl |
Fairchild Semiconductor |
|
IRFI634A | Power MOSFET $GYDQFHG 3RZHU 026)(7
IRFW/I634A
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leaka |
Fairchild Semiconductor |
|
IRFI634B | 250V N-Channel MOSFET IRFW634B / IRFI634B
November 2001
IRFW634B / IRFI634B
250V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, pl |
Fairchild Semiconductor |
|
IRFI634B | N-Channel MOSFET IRFW634B / IRFI634B
November 2001
IRFW634B / IRFI634B
250V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, pl |
Fairchild Semiconductor |
|
IRFI634G | POWER MOSFET |
International Rectifier |
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