IRFI540N डाटा शीट PDF( Datasheet )

PD - 9.1361A PRELIMINARY IRFI540N D HEXFET® Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated

isc N-Channel MOSFET Transistor ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤ 52mΩ (max) ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust

PD - 94833 HEXFET® Power MOSFET l l l l l l IRFI540NPbF D Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Fre