डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRFI540G | HEXFET POWER MOSFET www.DataSheet4U.com
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International Rectifier |
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IRFI540G | N-Channel MOSFET iscN-Channel MOSFET Transistor
·FEATURES ·Low drain-source on-resistance:
RDS(ON) =0.077Ω (MAX) ·Enhancement mode:
Vth = 2 to 4V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum Lot-to-Lot variat |
INCHANGE |
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IRFI540G | Power MOSFET Power MOSFET
IRFI540G, SiHFI540G
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
100 VGS = 10 V
72 11 32 Single
0.077
D TO-220 FULLPAK
G
GDS
S N-Cha |
Vishay |
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