IRFI530G डाटा शीट PDF( Datasheet )

Power MOSFET IRFI530G, SiHFI530G Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 100 VGS = 10 V 33 5.4 15 Single 0.16 TO-220 FULLPAK D G GDS S N-Ch

iscN-Channel MOSFET Transistor ·FEATURES ·Low drain-source on-resistance: RDS(ON) =0.16Ω (MAX) ·Enhancement mode: Vth = 2 to 4V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum Lot-to-Lot variati