डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRFI520N | Power MOSFET PD - 9.1362A
PRELIMINARY
IRFI520N
D
HEXFET® Power MOSFET
l l l l l
Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated |
International Rectifier |
|
IRFI520N | Power MOSFET | International Rectifier |
|
IRFI520GPBF | HEXFET Power MOSFET | International Rectifier |
|
IRFI520G | Power MOSFET | Vishay |
|
IRFI520G | HEXFET POWER MOSFET | International Rectifier |
|
IRFI520A | Advanced Power MOSFET | Fairchild Semiconductor |
www.DataSheet.in | 2017 | संपर्क |