IRFI510 डाटा शीट PDF( Datasheet )

Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 C Operating Temperature Lower Leakage Curren

Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 C Operating Temperature Lower Leakage Curren

Power MOSFET IRFI510G, SiHFI510G Vishay Siliconix PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 8.3 2.3 3.8 Single 0.54 TO-220 FULLPAK D GDS G S

iscN-Channel MOSFET Transistor ·FEATURES ·Low drain-source on-resistance: RDS(ON) =0.54Ω (MAX) ·Enhancement mode: Vth = 2 to 4V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum Lot-to-Lot variati