डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRFI4905 | HEXFET Power MOSFET l Advanced Process Technology
l Isolated Package l High Voltage Isolation = 2.5KVRMS
l Sink to Lead Creepage Dist. = 4.8mm
l P-Channel
l Fully Avalanche Rated Description
Fifth Generation HEXFETs from Intern |
International Rectifier |
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IRFI4905 | HEXFET Power MOSFET | International Rectifier |
www.DataSheet.in | 2017 | संपर्क |