IRFI3205 डाटा शीट PDF( Datasheet )

PD - 9.1374B IRFI3205 HEXFET® Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche

Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·Reduced switching and conduction losses ·100% avalanche tested ·Minimum

   Advanced Process Technology  Ultra Low On-Resistance  Isolated Package  High Voltage Isolation = 2.5KVRMS   Sink to Lead Creepage Dist. = 4.8mm  Fully Avalanche Rated  Lead-Free IRF

l Advanced Process Technology l Ultra Low On-Resistance l Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated l Lead-Free Description Fifth Gene