डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRFI1010NPBF | Power MOSFET l Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS
l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated l Lead-Free
G
Description
Fifth Generation HEXFETs from In |
International Rectifier |
|
IRFI1010NPBF | Power MOSFET | International Rectifier |
www.DataSheet.in | 2017 | संपर्क |