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भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRFI1010 | Power MOSFET PD - 9.1373A
IRFI1010N
HEXFET® Power MOSFET
l l l l l
Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated
D
VDSS = 55 |
International Rectifier |
|
IRFI1010N | Power MOSFET PD - 9.1373A
IRFI1010N
HEXFET® Power MOSFET
l l l l l
Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated
D
VDSS = 55 |
International Rectifier |
|
IRFI1010N | N-Channel MOSFET Isc N-Channel MOSFET Transistor
·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·Reduced switching and conduction losses ·100% avalanche tested ·Minimum |
INCHANGE |
|
IRFI1010NPBF | Power MOSFET l Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS
l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated l Lead-Free
G
Description
Fifth Generation HEXFETs from In |
International Rectifier |
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