डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRFF420 | N-Channel Power MOSFET IRFF420
MECHANICAL DATA Dimensions in mm (inches)
8 .8 9 (0 .3 5 ) 9 .4 0 (0 .3 7 )
N–CHANNEL POWER MOSFET
BVDSS ID(cont) RDS(on) 500V 1.5 3.0W
7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 )
6 .1 0 (0 .2 4 0 ) 6 . |
Seme LAB |
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IRFF420 | N-Channel Power MOSFET IRFF420
Data Sheet March 1999 File Number 1891.4
1.6A, 500V, 3.000 Ohm, N-Channel Power MOSFET
This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, |
Intersil Corporation |
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IRFF420 | HEXFET TRANSISTORS PD - 90429D
IRFF420
JANTX2N6794
REPETITIVE AVALANCHE AND dv/dt RATED
JANTXV2N6794
HEXFET®TRANSISTORS
REF:MIL-PRF-19500/555
THRU-HOLE (TO-205AF)
500V, N-CHANNEL
Product Summary
Part Number BVDSS
IRFF |
International Rectifier |
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IRFF420 | FIELD EFFECT POWER TRANSISTOR ~D~[F~ IRFF420,421
FIELD EFFECT POVVER TRANSISTOR
1.6 AMPERES
500, 450 VOLTS
ROS(ON) =3.0 n
Preliminary
This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology t |
GE |
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