IRFF320 डाटा शीट PDF( Datasheet )

IRFF320 Data Sheet March 1999 File Number 1890.4 2.5A, 400V, 1.800 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,

PD -90428D IRFF320 JANTX2N6792 REPETITIVE AVALANCHE AND dv/dt RATED JANTXV2N6792 HEXFET®TRANSISTORS REF:MIL-PRF-19500/555 THRU-HOLE (TO-205AF) 400V, N-CHANNEL Product Summary Part Number BVDSS RDS(on

~~D~~~ IRFF320,321 FIELD EFFECT POVVER TRANSISTOR 2.5 AMPERES 400, 350 VOLTS RDS(ON) = 1.8 n Preliminary This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology