IRFF310 डाटा शीट PDF( Datasheet )

IRFF310 Data Sheet March 1999 File Number 1888.3 1.35A, 400V, 3.600 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,

PD-90425D REPETITIVE AVALANCHE AND dv/dt RATED HEXFET®TRANSISTORS THRU-HOLE-TO-205AF (TO-39) Product Summary Part Number BVDSS RDS(on) IRFF310 400V 3.6Ω ID 1.25A IRFF310 JANTX2N6786 JANTXV2N6786 REF:M

~~D~[F~ IRFF310,311 FIELD EFFECT POWER TRANSISTOR 1.35 AMPERES 400, 350 VOLTS ROS(ON) = 3.6 n Preliminary This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology