IRFF230 डाटा शीट PDF( Datasheet )

IRFF230 Data Sheet March 1999 File Number 1892.3 5.5A, 200V, 0.400 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,

PD-90431D REPETITIVE AVALANCHE AND dv/dt RATED HEXFET®TRANSISTORS THRU-HOLE - TO-205AF (TO-39) Product Summary Part Number BVDSS IRFF230 200V RDS(on) 0.40Ω ID 5.5A IRFF230 JANTX2N6798 JANTXV2N6798 RE

~~D~[P~U IRFF230,231 FIELD EFFECT POWER TRANSISTOR 5.5 AMPERES 200,150 VOLTS ROS(ON) =0.4 n Preliminary This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology t