IRFF130 डाटा शीट PDF( Datasheet )

IRFF130 Data Sheet March 1999 File Number 1564.3 8.0A, 100V, 0.180 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,

PD - 90430C REPETITIVE AVALANCHE AND dv/dt RATED HEXFETTRANSISTORS THRU-HOLE (TO-205AF) Product Summary Part Number BVDSS IRFF130 100V RDS(on) 0.18Ω ID 8.0A IRFF130 JANTX2N6796 JANTXV2N6796 REF:MIL

~D~[P~ IRFF130,131 FIELD EFFECT POWER TRANSISTOR 8.0 AMPERES 100, 60 VOLTS ROS(ON) = 0.18!l Preliminary This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology t