डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRFF120 | N-CHANNEL POWER MOSFET 2N6788 IRFF120
MECHANICAL DATA Dimensions in mm (inches)
8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355)
4.06 (0.16) 4.57 (0.18)
N–CHANNEL POWER MOSFET ENHANCEMENT MODE
12.70 (0.500)
min.
(00.0.8395)max |
Seme LAB |
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IRFF120 | N-Channel Power MOSFET IRFF120
Data Sheet March 1999 File Number 1563.3
6.0A, 100V, 0.300 Ohm, N-Channel Power MOSFET
This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, |
Intersil Corporation |
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IRFF120 | N-channel Transistors REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTORS THRU-HOLE TO-205AF (TO-39)
Product Summary
Part Number
BVDSS
IRFF120
100V
RDS(on) ID 0.30 6.0A
PD-90426E
IRFF120 JANTX2N6788 JANTXV2N6788
100V |
International Rectifier |
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IRFF120 | N-Channel MOSFET www.DataSheet4U.com
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GE Solid State |
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