IRFD320 डाटा शीट PDF( Datasheet )

IRFD320 Data Sheet July 1999 File Number 2325.4 0.5A, 400V, 1.800 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, t

HEXFET® Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable Fast Switching Ease of paralleling Simple Drive Requirements PD -9.1226 IRFD320 VDSS = 400V RDS(on) =

www.vishay.com IRFD320, SiHFD320 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 400 VGS = 10 V 20 3.3 11 Single 1.8 D HVMDIP S G D G

~o~~ FIELD EFFECT PO'NER TRANSISTOR IRFD320,321 D82CQ2.Q1 0.5 AMPERES 400, 350 VOLTS RDS(ON} = 1.8 0 This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to ach