डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRFD224 | Power MOSFET HEXFET® Power MOSFET
Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable Fast Switching Ease of paralleling Simple Drive Requirements
PD -9.1272
IRFD224
VDSS = 250V RDS(on) = |
International Rectifier |
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IRFD220 | N-Channel Power MOSFET | Intersil Corporation |
|
IRFD220 | N-Channel Power MOSFET | Fairchild Semiconductor |
|
IRFD224 | Power MOSFET | International Rectifier |
|
IRFD220PBF | Power MOSFET | International Rectifier |
|
IRFD223 | FIELD EFFECT POWER TRANSISTOR | GE |
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IRFD220 | FIELD EFFECT POWER TRANSISTOR | GE |
|
IRFD220 | Power MOSFET | International Rectifier |
|
IRFD222 | FIELD EFFECT POWER TRANSISTOR | GE |
|
IRFD221 | FIELD EFFECT POWER TRANSISTOR | GE |
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