IRFD220 डाटा शीट PDF( Datasheet )

IRFD220 Data Sheet July 1999 File Number 2317.3 0.8A, 200V, 0.800 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, t

IRFD220 Data Sheet January 2002 0.8A, 200V, 0.800 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guara

~D~~U FIELD EFFECT POWER TRANSISTOR IRFD220,221 D82CN2,M2 0.8 AMPERES 200, 150 VOLTS RDS(ON) = 0.8 il This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to ac

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