डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRFD212 | FIELD EFFECT POWER TRANSISTOR ~~D~[F~
FIELD EFFECT POWER TRANSISTOR
IRFD212,213
0.45 AMPERES 200, 150 VOLTS RDS(ON) = 2.4 il
This series ofN-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve lo |
GE |
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IRFD210 | N-Channel Power MOSFET | Intersil Corporation |
|
IRFD210 | Power MOSFET | International Rectifier |
|
IRFD210PBF | HEXFET Power MOSFET | International Rectifier |
|
IRFD213 | N-Channel Transistor | IOR |
|
IRFD213 | N-Channel Transistor | Siliconix |
|
IRFD214 | Power MOSFET | International Rectifier |
|
IRFD211 | FIELD EFFECT POWER TRANSISTOR | GE |
|
IRFD214 | Power MOSFET | Vishay |
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IRFD213 | FIELD EFFECT POWER TRANSISTOR | GE |
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IRFD213 | N-Channel Power MOSFET | Harris |
www.DataSheet.in | 2017 | संपर्क |