IRFBG20 डाटा शीट PDF( Datasheet )
डेटा पत्रक ( Datasheet PDF ) |
| भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
| IRFBG20 | Power MOSFET |
 International Rectifier |
|
| IRFBG20 | Power MOSFET www.vishay.com
IRFBG20
Vishay Siliconix
Power MOSFET
D TO-220AB
S D G
G
S N-Channel MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration
1000
VGS = 10 V
11
38
4.9 |
 Vishay |
|
| IRFBG20 | N-Channel MOSFET iscN-Channel MOSFET Transistor
IRFBG20
·FEATURES ·Low drain-source on-resistance:
RDS(ON) = 11Ω (MAX) ·Enhancement mode:
Vth = 2 to 4V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum Lot-to-Lot |
 INCHANGE |
शेयर लिंक :
[1]
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