डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRFBF30 | Power MOSFET |
International Rectifier |
|
IRFBF30 | Power MOSFET Power MOSFET
IRFBF30, SiHFBF30
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
900 VGS = 10 V
78 10 42 Single
3.7
D
TO-220AB
G
S D G
ORDERING INFOR |
Vishay |
|
IRFBF30 | N-Channel MOSFET iscN-Channel MOSFET Transistor
IRFBF30
·FEATURES ·Low drain-source on-resistance:
RDS(ON) =3.7Ω (MAX) ·Enhancement mode:
Vth = 2 to 4V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum Lot-to-Lot |
INCHANGE |
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