डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRFBC20 | Power MOSFET |
International Rectifier |
|
IRFBC20 | N-Channel MOSFET iscN-Channel MOSFET Transistor
IRFBC20
·FEATURES ·Low drain-source on-resistance:
RDS(ON) = 4.4Ω (MAX) ·Enhancement mode:
Vth = 2 to 4V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum Lot-to-Lo |
INCHANGE |
|
IRFBC20 | Power MOSFET Power MOSFET
IRFBC20, SiHFBC20
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
600
VGS = 10 V
4.4
18
3.0
8.9
Single
D TO-220AB
G
S
D
G
S
N-C |
Vishay |
|
IRFBC20L | Power MOSFET PD - 9.1014
PRELIMINARY
l l l l l l l
IRFBC20S/L
HEXFET® Power MOSFET
D
Surface Mount (IRFBC20S) Low-profile through-hole (IRFBC20L) Available in Tape & Reel (IRFBC20S) Dynamic dv/dt Rating 150°C Operating |
International Rectifier |
|
IRFBC20L | Power MOSFET IRFBC20S, SiHFBC20S, IRFBC20L, SiHFBC20L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 18 3.0 8.9 Single
D
600 4.4
• Halogen- |
Vishay |
|
IRFBC20S | Power MOSFET PD - 9.1014
PRELIMINARY
l l l l l l l
IRFBC20S/L
HEXFET® Power MOSFET
D
Surface Mount (IRFBC20S) Low-profile through-hole (IRFBC20L) Available in Tape & Reel (IRFBC20S) Dynamic dv/dt Rating 150°C Operating |
International Rectifier |
|
IRFBC20S | Power MOSFET IRFBC20S, SiHFBC20S, IRFBC20L, SiHFBC20L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 18 3.0 8.9 Single
D
600 4.4
• Halogen- |
Vishay |
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