IRFB9N60A डाटा शीट PDF( Datasheet )

www.vishay.com IRFB9N60A Vishay Siliconix Power MOSFET D TO-220AB S D G G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 600 VGS = 10 V 49 13 20 Sin

PD - 91811 IRFB9N60A HEXFET® Power MOSFET l l l l l Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paraleling Simple Drive Requirements D VDSS = 600V G S RDS(on) = 0.75Ω ID = 9.2

iscN-Channel MOSFET Transistor IRFB9N60A ·FEATURES ·Low drain-source on-resistance: RDS(ON) =0.75Ω (MAX) ·Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum Lot