IRFB4510 डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor IRFB4510，IIRFB4510 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤13.5mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot

PD - 97772 IRFB4510PbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching G l Hard Switched and High Frequency Circuits Benefits