डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRFB3407Z | N-Channel MOSFET isc N-Channel MOSFET Transistor
IRFB3407Z,IIRFB3407Z
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤5.0mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot |
INCHANGE |
|
IRFB3407ZPbF | Power MOSFET IRFB3407ZPbF
Applications
HEXFET® Power MOSFET
l Battery Management l High Speed Power Switching
D
VDSS
RDS(on) typ.
75V 5.0mΩ
l Hard Switched and High Frequency Circuits G
max. ID (Silicon Limited)
|
International Rectifier |
www.DataSheet.in | 2017 | संपर्क |