IRFB3306 डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor IRFB3306，IIRFB3306 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤4.2mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot v

PD - 96211 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G Benefits l Improved Gate,

Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G D Benefits l Improved Gate, Avalanch