डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRF9Z34 | Power MOSFET |
International Rectifier |
|
IRF9Z34 | Power MOSFET www.vishay.com
IRF9Z34
Vishay Siliconix
Power MOSFET
TO-220AB
S G
S D G
D P-Channel MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration
-60 VGS = -10 V
34 9.9 16 Si |
Vishay |
|
IRF9Z34L | Power MOSFET PD - 9.913A
IRF9Z34S/L
HEXFET® Power MOSFET
Advanced Process Technology l Surface Mount (IRF9Z34S) l Low-profile through-hole (IRF9Z34L) l 175°C Operating Temperature l Fast Switching l P- Channel l Fully Av |
International Rectifier |
|
IRF9Z34L | Power MOSFET IRF9Z34S, SiHF9Z34S, IRF9Z34L, SiHF9Z34L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC)
- 60 VGS = - 10 V
34
Qgs (nC)
9.9
Qgd (nC)
16
Configuration
Single
0.14
I2P |
Vishay |
|
IRF9Z34LPBF | Surface Mount PD- 95767
IRF9Z34SPbF IRF9Z34LPbF
Lead-Free
www.DataSheet4U.com
www.irf.com
1
06/07/05
IRF9Z34S/LPbF
2
www.irf.com
IRF9Z34S/LPbF
www.irf.com
3
IRF9Z34S/LPbF
4
www.irf.com
IRF9Z34S/LPbF
www.irf |
International Rectifier |
|
IRF9Z34N | Power MOSFET PD - 9.1485B
IRF9Z34N
HEXFET® Power MOSFET
Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description
l l
D
VDSS = -55V
|
International Rectifier |
|
IRF9Z34N | P-Channel MOSFET isc P-Channel MOSFET Transistor
IRF9Z34N,IIRF9Z34N
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤0.1Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust devic |
INCHANGE |
www.DataSheet.in | 2017 | संपर्क |