IRF9510 डाटा शीट PDF( Datasheet )

www.vishay.com IRF9510 Vishay Siliconix Power MOSFET TO-220AB S G S D G D P-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration -100 VGS = -10 V 1.2 8.7

IRF9510 Data Sheet July 1999 File Number 2214.4 3.0A, 100V, 1.200 Ohm, P-Channel Power MOSFET This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, t

Power MOSFET IRF9510S, SiHF9510S Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration - 100 VGS = - 10 V 8.7 2.2 4.1 Single 1.2 D2PAK (TO-263) S G GD S