IRF9150 डाटा शीट PDF( Datasheet )

IRF9150 Data Sheet February 1999 File Number 2280.3 -25A, -100V, 0.150 Ohm, P-Channel Power MOSFET This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET design

isc P-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.15Ω ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation