IRF840A डाटा शीट PDF( Datasheet )

Power MOSFET IRF840A, SiHF840A Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 500 VGS = 10 V 38 9.0 18 Single 0.85 TO-220AB D S D G G S N-Channel

$GYDQFHG 3RZHU 026)(7 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 1

PD- 91900A SMPS MOSFET IRF840A HEXFET® Power MOSFET Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching Benefits Low Gate Charge Qg results in Simple

SEMICONDUCTOR IRF840 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET (8A, 500Volts) DESCRIPTION The Nell IRF840 are N-Channel enhancement mode silicon gate power field effect transistors. The

IRF840A Power MOSFET VDSS = 500V, RDS(on) = 0.85 ohm, ID = 8.0 A Drain D Gate Drain Source N Channel G Symbol S ELECTRICAL CHARACTERISICS at Tj = 25 C Maximum. Unless stated Otherwise Parameter Symbol

isc N-Channel Mosfet Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.85Ω(Max) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robus

PD- 91901B SMPS MOSFET IRF840AS IRF840AL HEXFET® Power MOSFET Applications Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply l High Speed Power Switching l VDSS 500V RDS(on) max 0.85Ω ID 8