IRF830B डाटा शीट PDF( Datasheet )

IRF830B/IRFS830B November 2001 IRF830B/IRFS830B 500V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar,

www.vishay.com IRF830B Vishay Siliconix D Series Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) max. () at 25 °C Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 550 VGS = 10 V 20 3 5 Single 1.5