डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRF731 | N-Channel Mosfet Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF731
DESCRIPTION ·Drain Current –ID=5.5A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 350V(Min) ·Static Drain-Source On-Resi |
Inchange Semiconductor |
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IRF731 | N-Channel Power MOSFET |
Fairchild Semiconductor |
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IRF7311 | HEXFET Power MOSFET PD - 91435C
IRF7311
HEXFET® Power MOSFET
l l l l l
Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Fully Avalanche Rated
S1 G1 S2 G2
1
8 7
D1 D1 D2 D2
2
VDSS = 20V R |
International Rectifier |
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IRF7313 | HEXFET POWER MOSFET PD - 95039
l Generation V Technology l Ultra Low On-Resistance l Dual N-Channel MOSFET l Surface Mount l Fully Avalanche Rated l Lead-Free
Description
Fifth Generation HEXFETs from International Rectifier util |
International Rectifier |
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IRF7313PBF | HEXFET Power MOSFET PD - 95039
IRF7313PbF
l l l l l l
Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Fully Avalanche Rated Lead-Free
HEXFET® Power MOSFET
S1 G1 S2 G2
1 2 8 7
D1 D1 D2 D2
V |
International Rectifier |
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IRF7313QPBF | HEXFET Power MOSFET PD - 96125
IRF7313QPbF
HEXFET® Power MOSFET
l l l l l l l l
Advanced Process Technology Ultra Low On-Resistance Dual N- Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Auto |
International Rectifier |
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IRF7314 | HEXFET Power MOSFET PD - 9.1436B
PRELIMINARY
l l l l l
IRF7314
HEXFET® Power MOSFET
8 7
Generation V Technology Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Fully Avalanche Rated
S1 G1 S2 G2
1
D1 D1 D2 D2
2
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International Rectifier |
www.DataSheet.in | 2017 | संपर्क |