डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRF650 | 200V N-Channel MOSFET IRF650B / IRFS650B
IRF650B / IRFS650B
200V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS techno |
Fairchild Semiconductor |
|
IRF650A | N-Channel Mosfet Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF650A
FEATURES ·Low RDS(on) = 0.073Ω(TYP) ·Lower Input Capacitance ·Improved Gate Charge ·Extended Safe Operating Are |
Inchange Semiconductor |
|
IRF650A | Advanced Power MOSFET
)($785(6
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Samsung |
|
IRF650A | Advanced Power MOSFET Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µ A (Max.) @ VDS = 2 |
Fairchild |
|
IRF650B | 200V N-Channel MOSFET IRF650B / IRFS650B
IRF650B / IRFS650B
200V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS techno |
Fairchild Semiconductor |
www.DataSheet.in | 2017 | संपर्क |