IRF644 डाटा शीट PDF( Datasheet )

IRF644B/IRFS644B November 2001 IRF644B/IRFS644B 250V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar,

Power MOSFET IRF644, SiHF644 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 250 VGS = 10 V 68 11 35 Single 0.28 TO-220AB D G S D G S N-Channel MO

INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification IRF644A ·FEATURES ·Avalanche Rugged Technology ·Rugged Gate Oxide Technology ·Lower Input Capacitance ·Improved Gate Charg

www.DataSheet4U.com $GYDQFHG 3RZHU 026)(7 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Low

IRF644B/IRFS644B November 2001 IRF644B/IRFS644B 250V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar,