डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRF640 | N-channel TrenchMOS transistor Philips Semiconductors
Product specification
N-channel TrenchMOS™ transistor
IRF640, IRF640S
FEATURES
• ’Trench’ technology • Low on-state resistance • Fast switching • Low thermal resistance
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NXP |
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IRF640 | N-Channel MOSFET ®
IRF640 IRF640FP
N - CHANNEL 200V - 0.150Ω - 18A TO-220/TO-220FP MESH OVERLAY™ MOSFET
TYPE IRF640 IRF640FP
s s s s
V DSS 200 V 200 V
R DS(on) < 0.18 Ω < 0.18 Ω
ID 18 A 18 A
TYPICAL RDS(on) = 0.1 |
STMicroelectronics |
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IRF640 | Power MOSFET |
International Rectifier |
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IRF640 | 200V N-Channel MOSFET IRF640, RF1S640, RF1S640SM
Data Sheet January 2002
18A, 200V, 0.180 Ohm, N-Channel Power MOSFETs
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFET |
Fairchild Semiconductor |
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IRF640 | N-Channel Enhancement Mode Power MOS Transistors SEMICONDUCTORS
IRF640 N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
FEATURE
N channel in a plastic TO220 package. They are intended for use in high speed power switching, low voltage, relay drivers and gene |
Comset Semiconductors |
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IRF640 | Power MOSFET IRF640, SiHF640
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 70 13 39 Single
D
FEATURES
200 0.18
• Dynamic dV/dt Rating • R |
Vishay |
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IRF640 | N-CHANNEL MOSFET IRF640
Rev.E Mar.-2016
DATA SHEET
描述 / Descriptions TO-220 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a TO-220 Plastic Package.
特征 / Features
低栅电荷,低反馈电容,开关速� |
BLUE ROCKET ELECTRONICS |
www.DataSheet.in | 2017 | संपर्क |