डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRF634 | N-CHANNEL Power MOSFET IRF634 IRF634FP
N-channel 250V - 0.38Ω - 8A TO-220 /TO-220FP Mesh Overlay™ Power MOSFET
General features
Type IRF634 IRF634FP
VDSS 250V 250V
RDS(on) <0.45Ω <0.45Ω
ID 8A 8A
33
22
■ Extremely Hi |
STMicroelectronics |
|
IRF634 | Power MOSFET |
International Rectifier |
|
IRF634 | Advanced Power MOSFET $GYDQFHG 3RZHU 026)(7
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 1 |
Fairchild Semiconductor |
|
IRF634 | Power MOSFET Power MOSFET
IRF634, SiHF634
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
250 VGS = 10 V
41 6.5 22 Single
0.45
D
TO-220AB
G
S D G
S N-Channel M |
Vishay |
|
IRF634 | N-CHANNEL MOSFET IRF634
Rev.E Mar.-2016
DATA SHEET
描述 / Descriptions TO-220 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a TO-220 Plastic Package.
特征 / Features
低栅电荷,低反馈电容,开关速� |
BLUE ROCKET ELECTRONICS |
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IRF634 | N-channel mosfet transistor MOSFET
IRF634
N-channel mosfet transistor
INCHANGE
Features
With TO-220 package Simple drive requirements Fast switching V DSS=250V; RDS(ON)0.45 ;I D=8.1A 1.gate 2.drain 3.source
Absolute Maximum Rating |
Inchange Semiconductor |
|
IRF634A | Advanced Power MOSFET $GYDQFHG 3RZHU 026)(7
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 1 |
Fairchild Semiconductor |
www.DataSheet.in | 2017 | संपर्क |