डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRF630A | Advanced Power MOSFET Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 20 |
Fairchild Semiconductor |
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IRF630A | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc Product Specification
isc N-Channel MOSFET Transistor
IRF630A
DESCRIPTION ·Drain Current –ID=9A@ TC=25℃ ·Drain Source Voltage: VDSS= 200V(Min) ·Static Drain-Source On-Resis |
Inchange Semiconductor |
www.DataSheet.in | 2017 | संपर्क |