डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRF624 | N-Channel Mosfet Transistor INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
·FEATURES ·RDS(on) =1.1Ω ·3.8A and 250V ·single pulse avalanche energy rated ·SOA is Power- Dissipation Limited ·Linear Transfer Characteristics ·H |
Inchange Semiconductor |
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IRF624 | 250V N-Channel MOSFET IRF624B/IRFS624B
November 2001
IRF624B/IRFS624B
250V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, |
Fairchild Semiconductor |
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IRF624 | Power MOSFET www.vishay.com
IRF624
Vishay Siliconix
Power MOSFET
D TO-220AB
S D G
G
S N-Channel MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration
250
VGS = 10 V
1.1
14
2.7
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Vishay |
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IRF624A | Advanced Power MOSFET Advanced Power MOSFET
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current : |
Fairchild Semiconductor |
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IRF624B | 250V N-Channel MOSFET IRF624B/IRFS624B
November 2001
IRF624B/IRFS624B
250V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, |
Fairchild Semiconductor |
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IRF624S | HEXFET Power MOSFET www.DataSheet4U.com
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International Rectifier |
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IRF624S | Power MOSFET Power MOSFET
IRF624S, SiHF624S
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC)
250 VGS = 10 V
14
Qgs (nC)
2.7
Qgd (nC)
7.8
Configuration
Single
D2PAK (TO-263)
D
1.1
GD S
G
S |
Vishay |
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