IRF620A डाटा शीट PDF( Datasheet )

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF620A FEATURES ·Low RDS(on) = 0.626Ω(TYP) ·Lower Input Capacitance ·Improved Gate Charge ·Extended Safe Operating Area

Advanced Power MOSFET IRF620A FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.)